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Preliminary SIDC30D120E6 Edited by INFINEON Technologies AI PS DD HV3, L 4182P, Edition 1, 8.01.2002 Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage V RRM 1200 V Continuous forward current limited by Tjmax I F 35 Single pulse forward current (depending on wire bond configuration) I FSM tP = 10 ms sinusoidal tbd Maximum repetitive forward current limited by Tjmax I FRM 70 A Operating junction and storage temperature Tj , Tstg -55...+150 °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Reverse leakage current I R V R=1200V Tj=25 ° C 27 µA Cathode-Anode breakdown Voltage V Br I R=2mA Tj=25°C 1200 V Forward voltage drop V F I F=35A Tj=25 ° C 1.9 V Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component Value Parameter Symbol Conditions min. Typ. max. Unit t rr1 IF=35A Tj =25°C tbd Reverse recovery time t rr2 di/dt=910A/ µs VR=600V Tj =125°C ns I RRM1 Tj =25°C 36.8 Peak recovery current I RRM2 IF=35A di/dt=910A/ µs VR= 600V Tj =125°C 46.3 A Qrr1 Tj=25 ° C 3.55 Reverse recovery charge Qrr2 IF=35A di/dt=910A/ µs VR= 600V Tj=125 ° C 7.63 µC dirr1/dt Tj= 25 ° C tbd Peak rate of fall of reverse recovery current dirr2/dt IF=35A di/dt=910A/ µs VR= 600V Tj=125 ° C A/ µs S1 Tj=25 ° C tbd Softness S2 IF=35A di/dt=910A/ µs VR= 600V Tj=125 ° C 1 |
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