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| SIDC73D170E6 |
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Preliminary SIDC73D170E6 Edited by INFINEON Technologies AI PS DD HV3, L4381M, Edition 1, 28.02.02 Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage V RRM 1700 V Continuous forward current limited by Tjmax I F 100 Single pulse forward current (depending on wire bond configuration) I FSM tP = 10 ms sinusoidal tbd Maximum repetitive forward current limited by Tjmax I FRM 200 A Operating junction and storage temperature Tj , Tstg -55...+150 °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Reverse leakage current I R V R=1700V Tj=25 ° C 27 µA Cathode-Anode breakdown Voltage V Br I R=4mA Tj=25°C 1700 V Forward voltage drop V F I F=100A Tj=25 ° C 2.15 V Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component Value Parameter Symbol Conditions min. Typ. max. Unit t rr1 IF=100A Tj = 25 °C tbd Reverse recovery time t rr2 di/dt=1700A/ µs VR=900V Tj = 150 °C ns I RRM1 Tj = 25 °C 110 Peak recovery current I RRM2 IF=100A di/dt=1700A/ µs VR=900V Tj = 150 °C 130 A Qrr1 Tj=25 ° C 35 Reverse recovery charge Qrr2 IF=100A di/dt=1700A/ µs VR=900V Tj=150 ° C 60 µC dirr1/dt Tj= 25 ° C tbd Peak rate of fall of reverse recovery current dirr2/dt IF=100A di/dt=1700A/ µs VR=900V Tj=150 ° C A/ µs S1 Tj=25 ° C tbd Softness S2 IF=100A di/dt=1700A/ µs VR=900V Tj=150 ° C 1 |
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