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SKW25N120 Datasheet(PDF) 12 Page - Infineon Technologies AG |
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SKW25N120 Datasheet(HTML) 12 Page - Infineon Technologies AG |
12 / 13 page SKW25N120 Power Semiconductors 12 Rev. 2_1 Apr 06 Figure A. Definition of switching times I rr m 90% I rr m 10% I rr m di /dt F t rr I F i,v t Q S Q F t S t F V R di /dt rr Q=Q Q rr S F + t=t t rr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T(t) j τ1 1 τ2 2 n n τ TC rr r r r r Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ=180nH, and stray capacity Cσ =40pF. |
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