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BD229 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BD229 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 Mar 04 3 Philips Semiconductors Product specification PNP power transistors BD227; BD229; BD231 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note 1. Refer to TO-126; SOT32 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BD227 −−45 V BD229 −−60 V BD231 −−100 V VCEO collector-emitter voltage open base BD227 −−45 V BD229 −−60 V BD231 −−80 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−1.5 A ICM peak collector current −−3A IBM peak base current −−1A Ptot total power dissipation Tmb ≤ 62 °C − 12.5 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 100 K/W Rth j-mb thermal resistance from junction to mounting base 7 K/W |
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