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74AUP1G06GW Datasheet(PDF) 1 Page - NXP Semiconductors |
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74AUP1G06GW Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 15 page 1. General description The 74AUP1G06 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74AUP1G06 provides the single inverting buffer with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. 2. Features s Wide supply voltage range from 0.8 V to 3.6 V s High noise immunity s Complies with JEDEC standards: x JESD8-12 (0.8 V to 1.3 V) x JESD8-11 (0.9 V to 1.65 V) x JESD8-7 (1.2 V to 1.95 V) x JESD8-5 (1.8 V to 2.7 V) x JESD8-B (2.7 V to 3.6 V) s ESD protection: x HBM JESD22-A114-D Class 3A exceeds 5000 V x MM JESD22-A115-A exceeds 200 V x CDM JESD22-C101-C exceeds 1000 V s Low static power consumption; ICC = 0.9 µA (maximum) s Latch-up performance exceeds 100 mA per JESD 78 Class II s Inputs accept voltages up to 3.6 V s Low noise overshoot and undershoot < 10 % of VCC s IOFF circuitry provides partial Power-down mode operation s Multiple package options s Specified from −40 °Cto+85 °C and −40 °C to +125 °C 74AUP1G06 Low-power inverter with open-drain output Rev. 02 — 24 August 2006 Product data sheet |
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