BD435 datasheet(3/4 Pages) ONSEMI

No. de pieza	BD435

Descripción Electrónicos	Plastic Medium Power Silicon NPN Transistor

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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BD435, BD437, BD439, BD441

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3

Figure 1. Collector Saturation Region

IB, BASE CURRENT (mA)

2.0

0

0.05

1.6

1.2

0.8

0.4

1.0

2.0

10

70

500

IC = 10 A

100 mA

1.0 A

0.1

100

20

5.0

TJ = 25°C

3.0

30

0.07

300

200

50

7.0

0.2

0.3

0.5 0.7

3.0 A

Figure 2. Current Gain

200

0

0.01

180

160

80

0.1

BD439, 441

0.02

3

0.3

0.2

1

5

2

0.5

0.03

0.05

IC, COLLECTOR CURRENT (AMP)

BD433, 435, 437

140

120

100

60

40

20

2.0

0.005

IC, COLLECTOR CURRENT (AMP)

1.6

1.2

0.8

0.6

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

Figure 3. “On” Voltage

0.02 0.030.05

0.1

0.2

VBE @ VCE = 2.0 V

0.01

0.3 0.5 1.0 2.0 3.0 4.0

Figure 4. Active Region Safe Operating Area

10

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

4.0

1.0

0.1

2.0

10

20

100

0.5

TJ = 150°C

dc

5 ms

1.0

5.0

50

SECONDARY BREAKDOWN

THERMAL LIMIT TC = 25°C

BONDING WIRE LIMIT

CURVES APPLY BELOW RATED VCEO

BD437

BD439

BD441

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