 |
 |
|
| BC107 |
|
||||||||||||||||
 PHILIPS
|
| ||||||||||||||||
|
4 page 
1997 Sep 03 4 Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 CHARACTERISTICS Tj =25 °C unless otherwise specified. Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =20V −− 15 nA IE = 0; VCB = 20 V; Tj = 150 °C −− 15 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 50 nA hFE DC current gain IC =10 µA; VCE =5V BC107A; BC108A − 90 − BC107B; BC108B; BC109B 40 150 − BC108C; BC109C 100 270 − hFE DC current gain IC = 2 mA; VCE =5V BC107A; BC108A 110 180 220 BC107B; BC108B; BC109B 200 290 450 BC108C; BC109C 420 520 800 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB =5mA − 200 600 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V; note 2 550 620 700 mV IC = 10 mA; VCE = 5 V; note 2 −− 770 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 2.5 6 pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz − 9 − pF fT transition frequency IC = 10 mA; VCB = 5 V; f = 100 MHz 100 −− MHz F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 30 Hz to 15.7 kHz BC109B; BC109C −− 4dB F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 1 kHz; B = 200 Hz BC107A; BC108A BC107B; BC108B; BC108C −− 10 dB BC109B; BC109C −− 4dB |
|
Número de Pieza relacionado |
| Número de Pieza | Descripción de Componentes | Html View | Fabricante |
| MSD1819A-RT1 | NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT | 1 2 3 4 5 More | ON Semiconductor |
| BC846T | NPN general purpose transistors | 1 2 3 4 5 More | NXP Semiconductors |
| L8050LT1 | General Purpose Transistors NPN Silicon | 1 2 3 | Leshan Radio Company |
| BC237 | NPN general purpose transistors | 1 2 3 4 5 More | NXP Semiconductors |
| BC846W | NPN general purpose transistors | 1 2 3 4 5 More | NXP Semiconductors |
| BCX70 | NPN general purpose transistors | 1 2 3 4 5 More | NXP Semiconductors |
| L8550HQLT1 | General Purpose Transistors NPN Silicon | 1 2 3 | Leshan Radio Company |
| BC817-16WT1 | General Purpose Transistors NPN Silicon | 1 2 | Leshan Radio Company |
| S9018LT1 | NPN General Purpose Transistors | 1 2 3 | Weitron Technology |
| JC546 | NPN general purpose transistors | 1 2 3 4 5 More | NXP Semiconductors |
Enlace URL |
Patrocinador de Alldatasheet |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Favorito | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved© Alldatasheet.com 2003 - 2012 |
| Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com | Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl |
