BC547 datasheet(4/8 Pages) PHILIPS | NPN general purpose transistors

4 page

2004 Nov 25

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

BC546; BC547

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Notes

1. VBEsat decreases by about 1.7 mV/K with increasing temperature.

2. VBE decreases by about 2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 30 V; IE =0 A

−−

VCB = 30 V; IE = 0 A; Tj = 150 °C

−−

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0 A

−−

100

hFE

DC current gain

VCE =5V; IC =10 µA;

see Figs 2, 3 and 4

BC546A

−

BC546B; BC547B

−

150

−

BC547C

−

270

−

DC current gain

VCE =5V; IC = 2 mA;

see Figs 2, 3 and 4

BC546A

110

180

220

BC546B; BC547B

200

290

450

BC547C

420

520

800

BC547

110

−

800

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−

250

IC = 100 mA; IB =5mA

−

200

600

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA; note 1

−

700

−

IC = 100 mA; IB = 5 mA; note 1

−

900

−

VBE

base-emitter voltage

VCE =5V; IC = 2 mA; note 2

580

660

700

VCE =5V; IC =10mA

−−

770

collector capacitance

VCB = 10 V; IE =ie = 0 A; f = 1 MHz −

1.5

−

emitter capacitance

VEB = 0.5 V; IC =ic = 0 A;

f = 1 MHz

−

transition frequency

VCE =5V; IC = 10mA; f = 100 MHz 100

−−

MHz

noise ﬁgure

VCE =5V; IC = 200 µA; RS =2kΩ;

f = 1 kHz; B = 200 Hz

−

210

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