BC846S datasheet(4/8 Pages) PHILIPS | NPN general purpose double transistor

Nombre de pieza

Descripción

BC846S

NPN general purpose double transistor ( 8 Page)

PHILIPS

4 page

1999 Sep 01

Philips Semiconductors

Product speciﬁcation

NPN general purpose double transistor

BC846S

Fig.2

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

103

102

MGL738

10−1

IC (mA)

VCEsat

(mV)

102

103

(1)

(2)

(3)

Fig.3

Base-emitter voltage as a function of

collector current; typical values.

VCE =5V.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

200

1200

400

600

800

1000

MGL739

10−1

VBE

(mV)

IC (mA)

102

103

(1)

(2)

(3)

handbook, full pagewidth

300

400

100

200

MGL740

10−1

hFE

IC (mA)

102

103

(1)

(2)

(3)

Fig.4 DC current gain as a function of collector current; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

1 2 3 4 5 6 7 8

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