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BC818W Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BC818W
Descripción Electrónicos  NPN general purpose transistor
Download  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC818W Datasheet(HTML) 2 Page - NXP Semiconductors

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1999 Apr 15
2
Philips Semiconductors
Product specification
NPN general purpose transistor
BC817W
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complement: BC807W.
MARKING
Note
1.
∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
BC817W
6D
BC818W
6H
BC817-16W
6A
BC818-16W
6E
BC817-25W
6B
BC818-25W
6F
BC817-40W
6C
BC818-40W
6G
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SOT323) and symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base; IC =10mA
45
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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