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BC848BF Datasheet(PDF) 3 Page - NXP Semiconductors |
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BC848BF Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 May 18 3 Philips Semiconductors Preliminary specification NPN general purpose transistors BC846F; BC847F; BC848F series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC846AF; BC846BF − 80 V BC847AF; BC847BF; BC847CF − 50 V BC848AF; BC848BF; BC848CF − 30 V VCEO collector-emitter voltage open base BC846AF; BC846BF − 65 V BC847AF; BC847BF; BC847CF − 45 V BC848AF; BC848BF; BC848CF − 30 V VEBO emitter-base voltage open collector − 5V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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