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BC857 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BC857 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 12 2 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846 and BC847. MARKING Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC856 3D ∗ BC857A 3E ∗ BC856A 3A ∗ BC857B 3F ∗ BC856B 3B ∗ BC857C 3G ∗ BC857 3H ∗ PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage 2 1 3 MAM256 Top view 2 3 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC856 −−80 V BC857 −−50 V VCEO collector-emitter voltage open base BC856 −−65 V BC857 −−45 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−100 mA ICM peak collector current −−200 mA IBM peak base current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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