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BC857A Datasheet(PDF) 3 Page - NXP Semiconductors |
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BC857A Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1999 Apr 12 3 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 THERMAL CHARACTERISTICS Note 1. Mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless otherwise specified. Notes 1. VBEsat decreases by about −1.7 m K/V with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −−1 −15 nA IE = 0; VCB = −30 V; Tj = 150 °C −− −4 µA IEBO emitter cut-off current IC = 0; VEB = −5V −− 100 nA hFE DC current gain IC = −2 mA; VCE = −5V; see Figs 2, 3 and 4 BC856 125 − 475 BC857 125 − 800 BC856A; BC857A 125 − 250 BC856B; BC857B 220 − 475 BC857C 420 − 800 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−75 −300 mV IC = −100 mA; IB = −5mA −−250 −650 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1 −−700 − mV IC = −100 mA; IB = −5 mA; note 1 −−850 − mV VBE base-emitter voltage IC = −2 mA; VCE = −5 V; note 2 −600 −650 −750 mV IC = −10 mA; VCE = −5 V; note 2 −− −820 mV Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz − 4.5 − pF fT transition frequency IC = −10 mA; VCE = −5V; f = 100 MHz 100 −− MHz F noise figure IC = −200 µA; VCE = −5V; RS =2kΩ; f = 1 kHz; B = 200 Hz − 210 dB |
Número de pieza similar - BC857A |
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Descripción similar - BC857A |
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