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BD131 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BD131 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 12 3 Philips Semiconductors Product specification NPN power transistor BD131 THERMAL CHARACTERISTICS Note 1. Refer to TO-126; SOT32 standard mounting conditions. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 100 K/W Rth j-mb thermal resistance from junction to mounting base 6 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =50V − 50 nA IE = 0; VCB =50V; Tj = 150 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB =5V − 50 nA hFE DC current gain IC = 0.5 A; VCE = 12 V; (see Fig.2) 40 − IC = 2 A; VCE = 1 V; (see Fig.2) 20 − VCEsat collector-emitter saturation voltage IC = 0.5 A; IB =50mA − 300 mV IC = 2 A; IB = 200 mA − 700 mV VBEsat base-emitter saturation voltage IC = 0.5 A; IB =50mA − 1.2 V IC = 2 A; IB = 200 mA − 1.5 V fT transition frequency IC = 0.25 A; VCE = 5 V; f = 100 MHz; Tamb =25 °C 60 − MHz |
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