BF420 datasheet(3/6 Pages) PHILIPS

No. de pieza	BF420

Descripción Electrónicos	NPN high-voltage transistors

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Fabricante Electrónico	PHILIPS [NXP Semiconductors]

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3 / 6 page

2004 Nov 10

3

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistors

BF420; BF422

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on a printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on a printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BF420

−

300

V

BF422

−

250

V

VCEO

collector-emitter voltage

open base

BF420

−

300

V

BF422

−

250

V

VEBO

emitter-base voltage

open collector

−

5V

IC

collector current (DC)

−

50

mA

ICM

peak collector current

−

100

mA

IBM

peak base current

−

50

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

830

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

150

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 200 V; IE =0 A

−

10

nA

VCB = 200 V; IE = 0 A; Tj = 150 °C

−

10

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0 A

−

50

nA

hFE

DC current gain

VCE =20V; IC =25mA

50

−

VCEsat

collector-emitter saturation voltage

IC = 30 mA; IB =5mA

−

0.6

V

Cre

feedback capacitance

VCE =30V; IC =ic = 0 A; f = 1 MHz

−

1.6

pF

fT

transition frequency

VCE =10V; IC = 10 mA; f = 100 MHz

60

−

MHz

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