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BF689K Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BF689K
Descripción Electrónicos  NPN 2 GHz wideband transistor
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF689K Datasheet(HTML) 3 Page - NXP Semiconductors

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September 1995
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BF689K
THERMAL RESISTANCE
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-a
thermal resistance from junction to ambient
in free air
250 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 15 V
−−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 2 V
−−
1
µA
VCE sat
collector-emitter saturation voltage
IC = 25 mA; IB = 1.25 mA
−−
1.0
V
VBE sat
base-emitter saturation voltage
IC = 25 mA; IB = 1.25 mA
−−
1.0
V
hFE
DC current gain
IC = 2 mA; VCE = 5 V
20
−−
IC = 20 mA; VCE = 5 V
35
−−
fT
transition frequency
IC = 15 mA; VCE = 5 V; f = 500 MHz
1.8
GHz
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
1.1
pF
Gp
power gain
IC = 2 mA; VCE = 5 V; f = 100 MHz;
Tamb = 25 °C; ZS = 60 Ω;RL = 2 kΩ
16
dB
IC = 2 mA; VCE = 5 V; f = 200 MHz;
Tamb = 25 °C; ZS = 60 Ω;RL = 920 Ω
16
dB
F
noise figure
IC = 2 mA; VCE = 5 V; f = 100 MHz;
Tamb = 25 °C; ZS = 60 Ω
4
dB
IC = 2 mA; VCE = 5 V; f = 200 MHz;
Tamb = 25 °C; ZS = 60 Ω
3
dB


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