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BF901 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BF901 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 7 page  November 1992 4 Philips Semiconductors Product specification Silicon n-channel dual gate MOS-FETs BF901; BF901R STATIC CHARACTERISTICS Tj = 25 °C. DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 14 mA; VDS = 5 V; VG2-S = 4 V; Tamb = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±IG1-SS gate 1 cut-off current ±VG1-S = 5 V; VG2-S = VDS = 0 − 50 nA ±I G2-SS gate 2 cut-off current ±VG2-S = 5 V; VG1-S = VDS = 0 − 50 nA ±V (BR)G1-SS gate 1-source breakdown voltage ±IG1-SS = 10 mA; VG2-S = VDS = 0 6 20 V ±V(BR)G2-SS gate 2-source breakdown voltage ±IG2-SS = 10 mA; VG1-S = VDS = 0 6 20 V VG1-S(th) gate 1-source threshold voltage ID = 20 µA; VDS = 8 V; VG2-S = 4 V 0 0.7 V VG2-S(th) gate 2-source threshold voltage ID = 20 µA; VDS = 8 V; VG1-S = 0 0.3 1 V IDSX drain-source current VDS = 4 V; VG1-S = 1.1 V; VG2-S = 3.4 V 2 18 mA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Yfs transfer admittance pulsed; Tj = 25 °C 252835mS Cig1-s input capacitance at gate 1 f = 1 MHz − 2.35 2.75 pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1.2 − pF Cos output capacitance f = 1 MHz − 1.4 − pF Crs feedback capacitance f = 1 MHz − 25 − fF F noise figure f = 200 MHz; Gs = 2 mS; Bs = Bsopt. − 0.7 − dB f = 800 MHz; Gs = 3.3 mS; Bs = Bsopt. − 1.7 − dB |
Número de pieza similar - BF901 |
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Descripción similar - BF901 |
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