SI3586DV datasheet(2/4 Pages) VISHAY

No. de pieza	SI3586DV

Descripción Electrónicos	N- and P-Channel 20-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si3586DV

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

VDS = VGS, ID = 250 µA

N-Ch

0.70

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

P-Ch

0.78

V

VDS ≥ 5 V, VGS = 4.5 V

N-Ch

111

On-State Drain Current

a

ID(on)

VDS ≤ −5 V, VGS = −4.5 V

P-Ch

47

A

VGS = 4.5 V, ID = 3.4 A

N-Ch

0.048

0.047

VGS = −4.5 V, ID = −2.5 A

P-Ch

0.088

0.086

VGS = 2.5 V, ID = 3.2 A

N-Ch

0.056

0.054

VGS = −2.5 V, ID = −2 A

P-Ch

0.120

0.116

Drain-Source On-State Resistance

a

rDS(on)

VGS = −1.8 V, ID = −1 A

P-Ch

0.165

0.170

Ω

VDS = 5 V, ID = 3.4 A

N-Ch

12

13

Forward Transconductance

a

gfs

VDS = −5 V, ID = −2.5 A

P-Ch

6.4

6

S

IS = 1.05 A, VGS = 0 V

N-Ch

0.80

Diode Forward Voltage

a

VSD

IS = −1.05 A, VGS = 0 V

P-Ch

−0.78

−0.80

V

Dynamic

b

N-Ch

4.1

Total Gate Charge

Qg

P-Ch

4

5

N-Ch

0.65

Gate-Source Charge

Qgs

P-Ch

0.68

N-Ch

0.90

Gate-Drain Charge

Qgd

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 3.4 A

P-Channel

VDS = −10 V, VGS = −4.5 V, ID = −2.5 A

P-Ch

0.90

Nc

N-Ch

29

30

Turn-On Delay Time

td(on)

P-Ch

45

28

N-Ch

52

Rise Time

tr

P-Ch

53

55

N-Ch

27

25

Turn-Off Delay Time

td(off)

P-Ch

69

55

N-Ch

27

20

Fall Time

tf

N-Channel

VDD =10 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω

P-Channel

VDD = −10 V, RL = 10 Ω

ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω

P-Ch

11

32

Ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2.

b. Guaranteed by design, not subject to production testing.

2

www.vishay.com

Document Number: 72435

S-50836

Rev. B, 16-May-05

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