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LM27222MX Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM27222MX Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 11 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. V CC to GND -0.3V to 7V CB to GND -0.3V to 36V CB to SW -0.3V to 7V SW to GND (Note 2) -2V to 36V LEN, IN, LG to GND -0.3V to V CC + 0.3V ≤ 7V HG to GND -0.3V to 36V Junction Temperature +150˚C Power Dissipation (Note 3) 720mW Storage Temperature −65˚ to 150˚C ESD Susceptibility Human Body Model 2kV Operating Ratings (Note 1) VCC 4V to 6.85V Junction Temperature Range −40˚ to 125˚C CB (max) 33V Electrical Characteristics (Note 4) VCC = CB = 5V, SW = GND = 0V, unless otherwise specified. Typicals and limits appearing in plain type apply for T A =TJ = +25˚C. Limits appearing in boldface type apply over the entire operating temperature range (-40˚C ≤ T J ≤ 125˚C). Symbol Parameter Conditions Min Typ Max Units POWER SUPPLY I q_op Operating Quiescent Current IN = 0V, LEN = 0V 5 15 µA 30 IN = 0V, LEN = 5V 500 540 650 µA 825 HIGH-SIDE DRIVER Peak Pull-up Current 3 A R H-pu Pull-up Rds_on I CB =IHG = 0.3A 0.9 2.5 Ω Peak Pull-down Current 4.5 A R H-pd Pull-down Rds_on I SW =IHG = 0.3A 0.4 1.5 Ω t 4 Rise Time Timing Diagram, C LOAD = 3.3nF 17 ns t 6 Fall Time Timing Diagram, C LOAD = 3.3nF 12 ns t 3 Pull-up Dead Time Timing Diagram 9.5 ns t 5 Pull-down Delay Timing Diagram 16.5 ns t on_min Minimum Positive Output Pulse Width 30 ns LOW-SIDE DRIVER Peak Pull-up Current 3.2 A R L-pu Pull-up Rds_on I VCC =ILG = 0.3A 0.9 2.5 Ω Peak Pull-down Current 4.5 A R L-pd Pull-down Rds_on I GND =ILG = 0.3A 0.4 1.5 Ω t 8 Rise Time Timing Diagram, C LOAD = 3.3nF 17 ns t 2 Fall Time Timing Diagram, C LOAD = 3.3nF 14 ns t 7 Pull-up Dead Time Timing Diagram 11.5 ns t 1 Pull-down Delay Timing Diagram 7.7 ns PULL-DOWN RESISTANCES HG-SW Pull-down Resistance 10k Ω LG-GND Pull-down Resistance 10k Ω LEN-GND Pull-down Resistance 150K Ω IN-GND Pull-down Resistance 150K Ω LEAKAGE CURRENTS I leak_IN IN pin Leakage Current IN = 0V, Source Current 50 nA IN = 5V, Sink Current 33 µA www.national.com 4 |
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