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SI3861BDV Datasheet(PDF) 5 Page - Vishay Siliconix |
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SI3861BDV Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 6 page Si3861BDV Vishay Siliconix New Product Document Number: 73343 S-51015—Rev. A, 23-May-05 www.vishay.com 5 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 20 40 60 80 100 120 0 20 40 60 80 100 120 R2 (kW) Switching Variation R2 @ VIN = 4.5 V, R1 = 300 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF td(on) tr tf td(off) 10−3 10−2 1 10 600 10−1 10−4 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 150_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Square Wave Pulse Dureation (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73343. |
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