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2N2905A Datasheet(PDF) 2 Page - STMicroelectronics |
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2N2905A Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page  THERMAL DATA TO-39 TO-18 Rthj-case Rthj-amb Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 50 250 83.3 375 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = -50 V VCB = -50 V Tj = 150 o C -10 -10 nA µA ICEX Collector Cut-off Current (VBE = 0.5V) VCE = -30 V -50 nA IBEX Base Cut-off Current (VBE = 0.5V) VCE = -30 V -50 nA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = -10 µA -60 V V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = -10 mA -60 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = -10 µA -5 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = -150 mA IB = -15 mA IC = -500 mA IB = -50 mA -0.4 -1.6 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = -150 mA IB = -15 mA IC = -500 mA IB = -50 mA -1.3 -2.6 V V hFE ∗ DC Current Gain IC = -0.1 mA VCE = -10 V IC = -1 mA VCE = -10 V IC = -10 mA VCE = -10 V IC = -150 mA VCE = -10 V IC = -500 mA VCE = -10 V 75 100 100 100 50 300 fT Transition Frequency VCE = -20 V f = 100 MHz IC = -50 mA 200 MHz CEBO Emitter-Base Capacitance IC = 0 VEB = -2 V f = 1MHz 30 pF CCBO Collector-Base Capacitance IE = 0 VCB = -10 V f = 1MHz 8 pF td ∗∗ Delay Time VCC = -30 V IC = -150 mA IB1 = -15 mA 10 ns tr ∗∗ Rise Time VCC = -30 V IC = -150 mA IB1 = -15 mA 40 ns ts ∗∗ Storage Time VCC = -6 V IC = -150 mA IB1 = -IB2 = -15 mA 80 ns tf ∗∗ Fall Time VCC = -6 V IC = -150 mA IB1 = -IB2 = -15 mA 30 ns ton ∗∗ Turn-on Time VCC = -30 V IC = -150 mA IB1 = -15 mA 45 ns toff ∗∗ Turn-off Time VCC = -6 V IC = -150 mA IB1 = -IB2 = -15 mA 100 ns * Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % ** See test circuit 2N2905A/2N2907A 2/7 |
Número de pieza similar - 2N2905A |
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Descripción similar - 2N2905A |
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