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NPN SILICON PLANAR EPITAXIAL TRANSISTORS CSC460 TO-92 Plastic Package High Frequency And VHF Amplifier Mixer ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 30 V Collector Base Voltage VCBO 30 V Emitter Base Voltage VEBO 5V Collector Current Continuous IC 100 mA Power Dissipation @ Ta=25ºC PC 200 mW Operating And Storage Junction Tj, Tstg -55 to +125 ºC Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION UNIT MIN TYP MAX Collector Emitter Voltage VCEO IC=1mA,RBE=0 30 V Collector Base Voltage VCBO IC=10µA,IE=0 30 V Emitter Base Voltage VEBO IE=10µA, IC=0 5V Collector Cut off Current ICBO VCB=18V, IE = 0 0.5 µA Emitter Cut off Current IEBO VEB=2V, IC = 0 0.5 µA Base Emitter (on) Voltage VBE (on) IC=2mA, VCE=12V 0.75 V Collector Emitter Saturation VCE(sat) IC=10mA,IB=1mA 1.1 V Voltage DC Current Gain hFE IC=2mA, VCE=12V 35 200 SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product fT IC=2mA, VCE=12V 230 MHz Output Capacitance Cob IE=0, VCB=10V 3.5 pF f=1MHz Noise Figure NF VCE =6V,IC=2mA Rg=500 Ω,f=1MHZ 5dB hFE CLASSIFICATION A : B: C: 35-70 60-150 100-200 VALUE Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company |
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