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ADF4108BRUZ-RL Datasheet(PDF) 6 Page - Analog Devices |
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ADF4108BRUZ-RL Datasheet(HTML) 6 Page - Analog Devices |
6 / 20 page ADF4108 Rev. 0 | Page 6 of 20 ABSOLUTE MAXIMUM RATING TA = 25°C, unless otherwise noted. Table 3. Parameter Rating AVDD to GND1 –0.3 V to +3.9 V AVDD to DVDD –0.3 V to +0.3 V VP to GND –0.3 V to +5.8 V VP to AVDD –0.3 V to +5.8 V Digital I/O Voltage to GND –0.3 V to VDD + 0.3 V Analog I/O Voltage to GND –0.3 V to VP + 0.3 V REFIN, RFINA, RFINB to GND –0.3 V to VDD + 0.3 V Operating Temperature Range Industrial (B Version) –40°C to +85°C Storage Temperature Range –65°C to +125°C Maximum Junction Temperature 150°C TSSOP θJA Thermal Impedance 112°C/W CSP θJA Thermal Impedance (Paddle Soldered) 30.4°C/W Reflow Soldering Peak Temperature (60 sec) 260 Time at Peak Temperature 40 sec Transistor Count CMOS 6425 Bipolar 303 1 GND = AGND = DGND = 0 V. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. This device is a high performance RF integrated circuit with an ESD rating of <2 kV, and it is ESD sensitive. Proper precautions should be taken for handling and assembly. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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Descripción similar - ADF4108BRUZ-RL |
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