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AM29LV6402MH100RPHI Datasheet(PDF) 3 Page - SPANSION |
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AM29LV6402MH100RPHI Datasheet(HTML) 3 Page - SPANSION |
3 / 57 page Publication# 27552 Rev: B Amendment/1 Issue Date: January 23, 2006 Refer to AMD’s Website (www.amd.com) for the latest information. Am29LV6402M 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit ™ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O™ Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES ■ Single power supply operation — 3 volt read, erase, and program operations ■ VersatileI/OTM control — Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V ■ Manufactured on 0.23 µm MirrorBitTM process technology ■ SecSi™ (Secured Silicon) Sector region — 128-doubleword/256-word sector for permanent, secure identification through an 8-doubleword/16-word random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer ■ Flexible sector architecture — One hundred twenty-eight 32 Kdoubleword (64 Kword) sectors ■ Compatibility with JEDEC standards — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection ■ 100,000 erase cycles per sector ■ 20-year data retention at 125°C PERFORMANCE CHARACTERISTICS ■ High performance — 100 ns access time — 30 ns page read times — 0.5 s typical sector erase time — 22 µs typical write buffer doubleword programming time: 16-doubleword/32-word write buffer reduces overall programming time for multiple-word updates — 4-doubleword/8-word page read buffer — 16-doubleword/32-word write buffer ■ Low power consumption (typical values at 3.0 V, 5 MHz) — 26 mA typical active read current — 100 mA typical erase/program current — 2 µA typical standby mode current ■ Package options — 80-ball Fortified BGA SOFTWARE & HARDWARE FEATURES ■ Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — Unlock Bypass Program command reduces overall multiple-word or byte programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices ■ Hardware features — Sector Group Protection: hardware-level method of preventing write operations within a sector group — Temporary Sector Unprotect: V ID-level method of changing code in locked sectors — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings — Hardware reset input (RESET#) resets device — Ready/Busy# output (RY/BY#) detects program or erase cycle completion This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. |
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