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AM29LV641ML101R Datasheet(PDF) 4 Page - SPANSION

No. de pieza AM29LV641ML101R
Descripción Electrónicos  64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
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Am29LV641MH/L
December 21, 2005
DA TA SH EET
GENERAL DESCRIPTION
The Am29LV641MH/L is a 64 Mbit, 3.0 volt single
power supply flash memory devices organized as
4,194,304 words. The devices have a 16-bit wide data
bus, and can be programmed either in the host system
or in standard EPROM programmers.
An access time of 90, 100, 110, or 120 ns is available.
Note that each access time has a specific operating
voltage range (V
CC) and an I/O voltage range (VIO), as
specified in the Product Selector Guide and the Order-
ing Information sections. The device is offered in a
48-pin TSOP package. Each device has separate chip
enable (CE#), write enable (WE#) and output enable
(OE#) controls.
Each device requires only a single 3.0 volt power
supply for both read and write functions. In addition to
a V
CC input, a high-voltage accelerated program
(ACC) input provides shor ter programming times
through increased current. This feature is intended to
facilitate factory throughput during system production,
but may also be used in the field if desired.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits to de-
termine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.
The VersatileI/O™ (V
IO) control allows the host sys-
tem to set the voltage levels that the device generates
and tolerates on the CE# control input and DQ I/Os to
the same voltage level that is asserted on the V
IO pin.
Refer to the Ordering Information section for valid V
IO
options.
Hardware data protection measures include a low
V
CC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of sectors of memory.
This can be achieved in-system or via programming
equipment.
The Erase Suspend/Erase Resume feature allows
the host system to pause an erase operation in a given
sector to read or program any other sector and then
complete the erase operation. The Program Sus-
pend/Program Resume feature enables the host sys-
tem to pause a program operation in a given sector to
read any other sector and then complete the program
operation.
The hardware RESET# pin terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The SecSi
™ (Secured Silicon) Sector provides a
128-word area for code or data that can be perma-
nently protected. Once this sector is protected, no fur-
ther changes within the sector can occur.
The Write Protect (WP#) feature protects the first or
last sector by asserting a logic low on the WP# pin.
The protected sector will still be protected even during
accelerated programming.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.


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