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AM29F800B-90EIB Datasheet(PDF) 1 Page - Advanced Micro Devices |
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AM29F800B-90EIB Datasheet(HTML) 1 Page - Advanced Micro Devices |
1 / 41 page PRELIMINARY 8/18/97 Publication# 20375 Rev: C Amendment/+1 Issue Date: August 1997 Am29F800T/Am29F800B 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection s Package options — 44-pin SO — 48-pin TSOP s Minimum 100,000 write/erase cycles guaranteed s High performance — 70 ns maximum access time s Sector erase architecture — One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and fifteen 64 Kbytes — Any combination of sectors can be erased. Also supports full chip erase. s Sector protection — Hardware method that disables any combination of sectors from write or erase operations. Implemented using standard PROM programming equipment. s Embedded Erase Algorithm — Automatically pre-programs and erases the chip or any sector s Embedded Program Algorithm — Automatically programs and verifies data at specified address s Data Polling and Toggle Bit feature for detection of program or erase cycle completion s Ready/Busy output (RY/BY) — Hardware method for detection of program or erase cycle completion s Erase Suspend/Resume — Supports reading data from or programming data to a sector not being erased s Low power consumption — 20 mA typical active read current for Byte Mode — 28 mA typical active read current for Word Mode — 30 mA typical program/erase current s Enhanced power management for standby mode —1 µA typical standby current s Boot Code Sector Architecture — T = Top sector — B = Bottom sector s Hardware RESET pin — Resets internal state machine to the read mode GENERAL DESCRIPTION The Am29F800 is an 8 Mbit, 5.0 Volt-only Flash mem- ory organized as 1 Mbyte of 8 bits each or 512K words of 16 bits each. For flexible erase capability, the 8 Mbits of data are divided into 19 sectors as follows: one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte. Eight bits of data appear on DQ0–DQ7 in byte mode; in word mode 16 bits appear on DQ0–DQ15. The Am29F800 is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC sup- ply. A VPP of 12.0 volts is not required for program or erase operations. The device can also be programmed in standard EPROM programmers. The standard Am29F800 offers access times of 70 ns, 90 ns, 120 ns, and 150 ns, allowing high-speed micropro- cessors to operate without wait states. To eliminate bus contention, the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The Am29F800 is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register con- tents serve as input to an internal state-machine which controls the erase and program circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out |
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