BLF245B datasheet(5/12 Pages) PHILIPS

No. de pieza	BLF245B

Descripción Electrónicos	VHF push-pull power MOS transistor

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Fabricante Electrónico	PHILIPS [NXP Semiconductors]

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5 / 12 page

September 1992

5

Philips Semiconductors

Product speciﬁcation

VHF push-pull power MOS transistor

BLF245B

Fig.6

Drain-source on-state resistance as a

function of junction temperature, typical

values per section.

ID = 0.75 A; VGS = 10 V

handbook, halfpage

0

2

1

0

40

80

160

120

MGP182

RDS(on)

(

Ω)

Tj (°C)

Fig.7

Input and output capacitance as functions

of drain-source voltage, typical values per

section.

VGS = 0; f = 1 MHz.

handbook, halfpage

010

20

40

160

0

80

120

40

30

MGP183

C

(pF)

VDS (V)

Cis

Cos

Fig.8

Feedback capacitance as a function of

drain-source voltage, typical values per

section.

VGS = 0; f = 1 MHz.

handbook, halfpage

010

20

40

20

0

10

30

MGP184

Crs

(pF)

VDS (V)

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BLF245B Datasheet(PDF) 5 Page - NXP Semiconductors

BLF245B Datasheet(HTML) 5 Page - NXP Semiconductors

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