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BLF247B Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLF247B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 16 page August 1994 6 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF247B APPLICATION INFORMATION RF performance in a push-pull, common source, class-B test circuit: Th = 25 °C; Rth mb-h = 0.15 K/W. Ruggedness in class-B operation The BLF247B is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 175 MHz; Th =25 °C; PL = 150 W; Rth mb-h = 0.15 K/W. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) CW, class-B 225 28 2 × 100 150 ≥12 typ. 13.5 ≥55 typ. 70 Fig.9 Power gain and efficiency as functions of load power; typical values. Class-B operation. VDS =28V. IDQ =2 × 100 mA. ZL = 1.3 + j0.6 Ω per section. f = 225 MHz. handbook, halfpage 0 50 100 150 200 250 0 4 8 12 16 20 0 20 40 60 80 100 P (W) L η (%) η MBD289 Gp Gp (dB) Class-B operation. VDS =28V. IDQ =2 × 100 mA. ZL = 1.3 + j0.6 Ω per section. f = 225 MHz. Fig.10 Load power as a function of input power; typical values. handbook, halfpage 0 300 200 100 0 10 20 30 MBD290 PL (W) P (W) i |
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