August 1994

6

Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF247B

APPLICATION INFORMATION

Ruggedness in class-B operation

The BLF247B is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the

MODE OF OPERATION

f

(MHz)

(V)

(mA)

(W)

(dB)

(%)

CW, class-B

225

28

2

× 100

150

≥12

typ. 13.5

≥55

typ. 70

Fig.9

Power gain and efficiency as functions of

load power; typical values.

Class-B operation.

f = 225 MHz.

handbook, halfpage

0

50

100

150

200

250

0

4

8

12

16

20

0

20

40

60

80

100

P (W)

L

η

(%)

η

MBD289

Gp

Gp

(dB)

Class-B operation.

f = 225 MHz.

Fig.10 Load power as a function of input power;

typical values.

handbook, halfpage

0

300

200

100

0

10

20

30

MBD290

PL

(W)

P (W)

i