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NPN SILICON PLANAR TRANSISTORS CIL351/352 TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation @ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg THERMAL CHARACTERISTICS Junction to Ambient in free air Rth (j-a) Junction to Case Rth (j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Emitter Voltage VCEO IC=1mA, IB=0 70 V Collector Base Voltage VCBO IC=100µA, IE=0 75 V Emitter Base Voltage VEBO IE=100µA, IC=0 6.0 V Collector Cut Off Current ICBO VCB=20V, IE=0 25 nA DC Current Gain hFE IC=1mA, VCE=10V CIL351 100 250 CIL352 200 480 Collector Emitter Saturation Voltage *VCE (sat) IC=10mA, IB=0.5mA 0.25 V IC=100mA, IB=5mA 0.60 V Base Emitter on Voltage VBE (on) IC=10mA, VCE=5V 1.0 V DYNAMIC CHARACTERISTICS DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Transition Frequency fT IC=10mA, VCE=5V, f=100MHz 100 MHz *Pulse Condition: Pulse Width <300 µµs, Duty Cycle <2% CIL351_352Rev_1 120504E ºC/W 233 UNIT V V 583 ºC/W V mA mW mW/ ºC mW 200 300 1.72 750 VALUE 70 75 6.0 4.29 - 65 to +200 mW/ ºC ºC Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company |
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