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BUL310PI Datasheet(Hoja de datos) 2 Page - STMicroelectronics

No. de Pieza. BUL310PI
Descripción  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
Descarga  7 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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 2 page
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THERMAL DATA
T O-220
ISOW ATT 220
Rthj-ca se
Rthj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1.65
62.5
3. 58
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICES
Collect or Cut-off
Current (VBE =0)
VCE =1000 V
VCE =1000 V
Tj = 125
oC
100
500
µA
µA
ICEO
Collect or Cut-off
Current (IB =0)
VEC =400 V
250
µA
VCEO(sus)
Collect or-Emitter
Sustaining Voltage
IC = 100 mA
L= 25 mH
500
V
VEBO
Emitt er-Base Voltage
(IC =0)
IE =10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =1 A
IB =0.2 A
IC =2 A
IB =0.4 A
IC =3 A
IB =0.6 A
0.5
0.7
1.1
V
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =1 A
IB =0.2 A
IC =2 A
IB =0.4 A
IC =3 A
IB =0.6 A
1
1.1
1.2
V
V
V
hFE
DC Current G ain
IC =10 mA
VCE =5 V
IC =3 A
VCE =2.5 V
10
10
ts
tf
INDUCTIVE LOAD
St orage Time
Fall T ime
IC =2 A
IB1 =0.4 A
VBE(off) =-5 V
RBB =0
VCL = 250 V
L = 200
µH
1.2
80
1.9
160
µs
ns
ts
tf
INDUCTIVE LOAD
St orage Time
Fall T ime
IC =2 A
IB1 =0.4 A
VBE(off) =-5V
RBB =0
VCL = 250 V
L = 200
µH
Tj = 125
oC
1.8
150
µs
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL310/PI
2/7




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