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BAS16H Datasheet(PDF) 5 Page - NXP Semiconductors |
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BAS16H Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 10 page 9397 750 14478 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 15 April 2005 5 of 10 Philips Semiconductors BAS16H High-speed switching diode in SOD123F package (1) Tamb = 150 °C; typical values (2) Tamb =25 °C; typical values (3) Tamb =25 °C; maximum values Based on square wave currents Tj =25 °C; prior to surge Fig 1. Forward current as a function of forward voltage Fig 2. Non-repetitive peak forward current as a function of pulse duration f = 1 MHz; Tj = 25 °C Fig 3. Reverse current as a function of junction temperature Fig 4. Diode capacitance as a function of reverse voltage; typical values 02 300 IF (mA) 0 100 200 mbg382 1 VF (V) (1) (2) (3) 006aaa308 tp (ms) 10−2 10 1 10−1 10 IFSM (A) 1 105 104 10 200 0 mga884 100 Tj (°C) IR (nA) 103 102 75 V 25 V typ max VR = 75 V typ 08 16 12 4 0.8 0.6 0 0.4 0.2 mbg446 VR (V) Cd (pF) |
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