BLS2933-100 datasheet(5/12 Pages) PHILIPS

No. de pieza	BLS2933-100

Descripción Electrónicos	Microwave power LDMOS transistor

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BLS2933-100_1

Product data sheet

Rev. 01 — 1 August 2006

5 of 12

Philips Semiconductors

BLS2933-100

Microwave power LDMOS transistor

VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %;

PL = 100 W.

(1) f = 2.9 MHz.

(2) f = 3.0 MHz.

(3) f = 3.1 MHz.

(4) f = 3.2 MHz.

(5) f = 3.3 MHz.

VDS =32V; IDq = 20 mA; tp = 200 µs; δ = 12 %.

Fig 2.

Power gain and drain efﬁciency as functions of

frequency; typical values

Fig 3.

Power gain as a function of load power; typical

values

(1) f = 2.9 MHz.

(2) f = 3.0 MHz.

(3) f = 3.1 MHz.

(4) f = 3.2 MHz.

(5) f = 3.3 MHz.

VDS = 32 V; IDq = 20 mA; tp = 200 µs; δ = 12 %.

(1) f = 2.9 MHz.

(2) f = 3.0 MHz.

(3) f = 3.1 MHz.

(4) f = 3.2 MHz.

(5) f = 3.3 MHz.

VDS =32V; IDq = 20 mA; tp = 200 µs; δ = 12 %.

Fig 4.

Efﬁciency as a function of power load; typical

values

Fig 5.

Load power as a function of input power;

typical values

001aaf066

f (GHz)

2.8

3.4

3.2

3.0

4

6

2

8

10

Gp

(dB)

ηD

(%)

0

20

30

10

40

50

0

ηD

Gp

PL (W)

0

160

120

40

80

001aaf070

4

6

2

8

10

Gp

(dB)

0

(1)

(2)

(3)

(4)

(5)

PL (W)

0

160

120

40

80

001aaf071

20

30

10

40

50

ηD

(%)

0

(1)

(2)

(3)

(4)

(5)

001aaf072

Pi (W)

030

20

10

80

40

120

160

PL

(W)

0

(1) (2) (3)

(4)

(5)

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