AD8613 datasheet(3/16 Pages) AD | Low Cost Micropower, Low Noise CMOS Rail-to- Rail, Input/Output Operational Amplifiers

3 page

AD8613/AD8617/AD8619

Rev. B | Page 3 of 16

SPECIFICATIONS

Electrical characteristics @ VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted.

Table 1.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

INPUT CHARACTERISTICS

Offset Voltage

VOS

−0.3 V < VCM < +5.3 V

0.4

2.2

−40°C < TA < +125°C, −0.3 V < VCM < +5.2 V

2.2

Offset Voltage Drift

∆VOS/∆T

−40°C < TA < +125°C

4.5

μV/°C

AD8613

2.5

7.0

μV/°C

Input Bias Current

0.2

−40°C < TA < +85°C

110

−40°C < TA < +125°C

780

Input Offset Current

IOS

0.1

0.5

−40°C < TA < +85°C

−40°C < TA < +125°C

250

Common-Mode Rejection Ratio

CMRR

0 V < VCM < 5 V

−40°C < TA < +125°C

Large Signal Voltage Gain

AVO

RL = 10 kΩ, 0.5 V < VO < 4.5 V

235

500

V/mV

Input Capacitance

CDIFF

1.9

CCM

2.5

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

IL = 1 mA

4.95

4.98

−40°C to +125°C

4.9

IL = 10 mA

4.7

−40°C to +125°C

4.50

Output Voltage Low

VOL

IL = 1 mA

−40°C to +125°C

IL = 10 mA

190

275

−40°C to +125°C

335

Short-Circuit Current

ISC

±80

Closed-Loop Output Impedance

ZOUT

f = 10 kHz, AV = 1

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

1.8 V < VS < 5 V

−40°C < TA < +125°C

Supply Current/Amplifier

ISY

VO = VS/2

μA

−40°C <TA < +125°C

μA

DYNAMIC PERFORMANCE

Slew Rate

RL = 10 kΩ

0.1

V/μs

Settling Time 0.1%

G = ±1, 2 V step, CL = 20 pF, RL = 1 kΩ

μs

Gain Bandwidth Product

GBP

RL = 100 kΩ

400

kHz

RL = 10 kΩ

350

kHz

Phase Margin

ØO

RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF

Degrees

NOISE PERFORMANCE

Peak-to-Peak Noise

2.3

3.5

μV

Voltage Noise Density

f = 1 kHz

nV/√Hz

f = 10 kHz

nV/√Hz

Current Noise Density

f = 1 kHz

0.05

pA/√Hz

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