2N6251 datasheet(2/6 Pages) MOTOROLA | High Voltage NPN Silicon Power Transistors

2 page

2N6251

3–105

Motorola Bipolar Power Transistor Device Data

*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 200 mA, IB = 0)

VCEO(sus)

350

—

Vdc

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 200 mA)

VCER(sus)

375

—

Vdc

Collector Cutoff Current

(VCE = Rated VCER, VBE(off) = 1.5 Vdc)

(VCE = Rated VCER, VBE(off) = 1.5 Vdc, TC = 125_C)

ICEV

—

5.0

mAdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

(VCE = 225 Vdc, IB = 0)

(VCE = 300 Vdc, IB = 0)

ICEO

—

5.0

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

IEBO

—

1.0

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward

(VCE = 30 V)

biased t = 1.0s (non–repetitive)

(VCE = 100 V)

IS/b

5.8

0.3

—

Vdc

Second Breakdown Energy with base reverse biased (Table 1)

(IC = 10 A, VBE(off) = 4.0 Vdc, L = 50 µH)

ES/b

2.5

—

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc)

hFE

6.0

—

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 1.67 Adc)

VCE(sat)

—

1.5

Vdc

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 10 Adc, IB = 1.25 Adc)

(IC = 10 Adc, IB = 1.67 Adc)

VBE(sat)

—

2.5

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

2.5

—

MHz

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Rise Time

(VCC = 200 Vdc, IC = 10 A, Duty

Cycle

v 2.0%, tp = 100 µs)

(IB1 = IB2 = 1.67 Adc)

—

2.0

µs

Storage Time

(VCC = 200 Vdc, IC = 10 A, Duty

Cycle

v 2.0%, tp = 100 µs)

(IB1 = IB2 = 1.67 Adc)

—

3.5

µs

Fall Time

v 2.0%, tp = 100 µs)

(IB1 = IB2 = 1.67 Adc)

—

1.0

µs

* Indicates JEDEC Registered Data.

(1) Measured on a curve tracer (60 Hz full–wave rectified sine wave).

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