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Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 70 IC @ TC = 100°C Continuous Collector Current 39 A ICM Pulsed Collector Current 280 ILM Clamped Inductive Load Current 280 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy 20 mJ PD @ TC = 25°C Maximum Power Dissipation 200 PD @ TC = 100°C Maximum Power Dissipation 78 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) °C Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm) IRG4PC50FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 95398 E C G n-channel TO-247AC Features Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Benefits VCES=600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A 6/16/04 Parameter Typ. Max. Units RθJC Junction-to-Case 0.64 RθCS Case-to-Sink, Flat, Greased Surface 0.24 °C/W RθJA Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.21) g (oz) Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 Lead-Free |
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