MC3346 datasheet(2/4 Pages) MOTOROLA | GENERAL PURPOSE TRANSISTOR ARRAY ONE DIFFERENTIALLY CONNECTED PAIR AND THREE ISOIATED TRANSISTOR ARRAYS

2 page

MC3346

MOTOROLA ANALOG IC DEVICE DATA

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted.)

Characteristics

Symbol

Min

Typ

Max

Unit

STATIC CHARACTERISTICS

Collector–Base Breakdown Voltage

(IC = 10 µAdc)

V(BR)CBO

–

Vdc

Collector–Emitter Breakdown Voltage

(IC = 1.0 mAdc)

V(BR)CEO

–

Vdc

Collector–Substrate Breakdown Voltage

(IC = 10 µA)

V(BR)CIO

–

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 µAdc)

V(BR)EBO

5.0

7.0

–

Vdc

Collector–Base Cutoff Current

(VCB = 10 Vdc, IE = 0)

ICBO

–

nAdc

DC Current Gain

(IC = 10 mAdc, VCE = 3.0 Vdc)

(IC = 1.0 mAdc, VCE = 3.0 Vdc)

(IC = 10 µAdc, VCE = 3.0 Vdc)

hFE

–

140

130

–

Base–Emitter Voltage

(VCE = 3.0 Vdc, IE = 1.0 mAdc)

(VCE = 3.0 Vdc, IE = 10 mAdc)

VBE

–

0.72

0.8

–

Vdc

Input Offset Current for Matched Pair Q1 and Q2

(VCE = 3.0 Vdc, IC = 1.0 mAdc)

|IIO1 – IIO2|

–

0.3

2.0

µAdc

Magnitude of Input Offset Voltage

(VCE = 3.0 Vdc, IC = 1.0 mAdc)

–

0.5

5.0

mVdc

Temperature Coefficient of Base–Emitter Voltage

(VCE = 3.0 Vdc, IC = 1.0 mAdc)

∆VBE

–

–1.9

–

mV/

°C

Temperature Coefficient

∆VIO

–

1.0

–

µV/°C

Collector–Emitter Cutoff Current

(VCE = 10 Vdc, IB = 0)

ICEO

–

0.5

µAdc

DYNAMIC CHARACTERISTICS

Low Frequency Noise Figure

(VCE = 3.0 Vdc, IC = 100 µAdc, RS = 1.0 kΩ, f = 1.0 kHz)

–

3.25

–

Forward Current Transfer Ratio

(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

hFE

–

110

–

Short Circuit Input Impedance

(VCE = 3.0 Vdc, IC = 1.0 mAdc)

hie

–

3.5

–

Ω

Open Circuit Output Impedance

(VCE = 3.0 Vdc, IC = 1.0 mAdc)

hoe

–

15.6

–

µmhos

Reverse Voltage Transfer Ratio

(VCE = 3.0 Vdc, IC = 1.0 mAdc)

hre

–

1.8

–

x10–4

Forward Transfer Admittance

(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)

yfe

–

31–j1.5

–

Input Admittance

(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)

yie

–

0.3 + j0.04

–

Output Admittance

(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)

yoe

–

0.001 + j0.03

–

Current–Gain – Bandwidth Product

(VCE = 3.0 Vdc, IC = 3.0 mAdc)

300

550

–

MHz

Emitter–Base Capacitance

(VEB = 3.0 Vdc, IE = 0)

Ceb

–

0.6

–

Collector–Base Capacitance

(VCB = 3.0 Vdc, IC = 0)

Ccb

–

0.58

–

Collector–Substrate Capacitance

(VCS = 3.0 Vdc, IC = 0)

CCI

–

2.8

–

Número de Pieza	Descripción de Componentes	Html View	Fabricante
2SA2029M3	PNP Silicon General Purpose Amplifier Transistor	1 2 3 4	ON Semiconductor
2SC5658M3T5G	NPN Silicon General Purpose Amplifier Transistor	1 2 3 4	Vaishali Semiconductor
MSD42SWT1	NPN Silicon General Purpose High Voltage Transistor	1 2	ON Semiconductor
BC807DS	PNP general purpose double transistor	1 2 3 4 5 More	NXP Semiconductors
HV500V	Ceramic Disc Capacitors Class 1 and 2 500 V DC General Purpose	1 2 3 4 5 More	Vishay Siliconix
KB814	GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES	1 2 3 4 5 More	Kingbright Corporation
SN74SSTE32882	28-Bit to 56-Bit Registered Buffer With Address Parity Test and One Pair to Four Pair Differential Clock PLL Driver	1 2 3 4 5 More	Texas Instruments
RC01	General purpose chip resistors	1 2 3 4 5 More	List of Unclassifed Manufacturers
HEDS-51X0	Two and Three Channel Codewheels for Use with Agilent Optical Encoder Modules	1 2 3 4 5 More	Agilent(Hewlett-Packard)

Número de Pieza relacionado

Enlace URL

Patrocinador de Alldatasheet