2SK2499, 2SK2499-Z

2

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

TEST CONDITIONS

Drain to Source On-State Resistance

7.3

9.0

11

14

Gate to Source Cutoff Voltage

1.0

1.5

2.0

Forward Transfer Admittance

20

58

Drain Leakage Current

10

Gate to Source Leakage Current

±10

Input Capacitance

3 400

Output Capacitance

1 600

Reverse Transfer Capacitance

770

f = 1 MHz

Turn-On Delay Time

55

Rise Time

360

Turn-Off Delay Time

480

Fall Time

360

Ω

Total Gate Charge

152

Gate to Source Charge

11

Gate to Drain Charge

60

Body Diode Forward Voltage

0.92

Reverse Recovery Time

105

Reverse Recovery Charge

265

di/dt = 100 A/

µs

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

UNIT

m

Ω

m

Ω

V

S

µA

µA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

Test Circuit 3 Gate Charge

→ 0 V

PG

Ω

50

Ω

D.U.T.

L

Test Circuit 1 Avalanche Capability

PG.

Ω

D.U.T.

Test Circuit 2 Switching Time

PG.

50

Ω

D.U.T.

0

t = 1 s

Duty Cycle

≤ 1 %

Wave Form

Wave Form

10 %

10 %

0

0

90 %

90 %

90 %

10 %

t

µ