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 MITSUBISHI
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4 page 
Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Duty Cycle-Collector Characteristics (M63826GP) Duty cycle (%) Duty Cycle-Collector Characteristics (M63826GP) Duty cycle (%) Collector current IcC (mA) Grounded Emitter Transfer Characteristics DC Amplification Factor Collector Current Characteristics Input voltage VI (V) Input Characteristics Input voltage VI (V) Clamping Diode Characteristics Forward bias voltage VF (V) 1 2 3 4 5 6 7 0 100 20 40 60 80 500 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 5 6 7 101 102 103 102 103 104 2 3 57 2 3 57 2 3 5 7 2 3 5 7 0 1 234 5 05 10 20 15 25 0 0.5 1.0 1.5 2.0 500 400 300 200 100 0 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25 °C 500 400 300 200 100 0 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85 °C 0 400 300 200 100 0 500 Ta = 85 °C Ta = 25 °C Ta = –40 °C 4 3 2 1 0 Ta = –40 °C Ta = 85 °C Ta = 25 °C Ta = 85 °C Ta = 25 °C Ta = –40 °C VCE = 4V Ta = 85 °C Ta = –40 °C Ta= 25 °C |
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