M63826P datasheet(1/4 Pages) MITSUBISHI | 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

1 page

Jan. 2000

16P2N-A(FP)

IN7→

→O7

IN5

→

→O5

INPUT

OUTPUT

IN4

→

→O4

IN3→

→O3

IN2

→

→O2

IN1

→

→O1

GND

IN6

→

→O6

16P4(P)

→COM COMMON

16P2S-A(GP)

Package type

Unit :

Ω

The seven circuits share the COM and GND

The diode, indicated with the dotted line, is parasitic, and

cannot be used.

INPUT

OUTPUT

GND

10.5k

7.2k

COM

PIN CONFIGURATION

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63826P/FP/GP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

DESCRIPTION

M63826P, M63826FP and M63826GP are seven-circuit

Darlington transistor arrays with clamping diodes. The cir-

cuits are made of NPN transistors. Both the semi-conductor

integrated circuits perform high-current driving with ex-

tremely low input-current supply.

Production lineup has been newly expanded with the addi-

tion of 225mil (GP) package.

M63826P and M63826FP have the same pin connection as

M54526P and M54526FP. (Compatible with M54526P and

M54526FP) More over, the features of M63826P and

M63826FP are equal or superior to those of M54526P and

M54526FP.

FEATURES

Three package configurations (P, FP and GP)

Pin connection Compatible with M54526P and M54526FP

High breakdown voltage (BVCEO

≥ 50V)

High-current driving (IC(max) = 500mA)

q With clamping diodes

Driving available with PMOS IC output of 8-18V

Wide operating temperature range (Ta = –40 to +85

°C)

APPLICATION

Drives of relays and printers, digit drives of indication ele-

ments (LEDs and lamps), and MOS-bipolar logic IC inter-

faces

FUNCTION

The M63826P, M63826FP and M63826GP each have seven

circuits consisting of NPN Darlington transistors. These ICs

have resistance of 10.5k

Ω between input transistor bases

and input pins. A spike-killer clamping diode is provided be-

tween each output pin (collector) and COM pin (pin 9). The

output transistor emitters are all connected to the GND pin

(pin 8). The collector current is 500mA maximum. Collector-

emitter supply voltage is 50V maximum.The M63826FP and

M63826GP is enclosed in molded small flat package, en-

abling space-saving design.

CIRCUIT DIAGRAM

Collector-emitter voltage

Collector current

Input voltage

Clamping diode forward current

Clamping diode reverse voltage

Power dissipation

Operating temperature

Storage temperature

°C

–0.5 ~ +50

500

–0.5 ~ +30

500

1.47(P)/1.00(FP)/0.80(GP)

–40 ~ +85

–55 ~ +125

Ratings

Symbol

Parameter

Conditions

Unit

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85

°C)

Output, H

Current per circuit output, L

Ta = 25

°C, when mounted on board

VCEO

Topr

Tstg

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