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2SK3516-01S Datasheet(PDF) 1 Page - Fuji Electric |
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2SK3516-01S Datasheet(HTML) 1 Page - Fuji Electric |
1 / 4 page 1 P4 Item Symbol Ratings Unit Drain-source voltage VDS 450 Continuous drain current ID ±8 Pulsed drain current ID(puls] ±32 Gate-source voltage VGS ±30 Repetitive or non-repetitive IAR *2 8 Maximum Avalanche Energy EAS *1 193 Maximum Drain-Source dV/dt dVDS/dt *4 20 Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD Ta=25°C 1.67 Tc=25°C 65 Operating and storage Tch +150 temperature range Tstg Electrical characteristics (Tc =25°C unless otherwise specified) Thermalcharacteristics 2SK3516-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=450V VGS=0V VDS=360V VGS=0V VGS=±30V ID=4A VGS=10V ID=4A VDS=25V VCC=300V ID=4A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 1.92 75.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=225V ID=8A VGS=10V L=5.53mH Tch=25°C IF=8A VGS=0V Tch=25°C IF=8A VGS=0V -di/dt=100A/µs Tch=25°C V A A V A mJ kV/µs kV/µs W °C °C 450 3.0 5.0 25 250 10 100 0.50 0.65 48 800 1200 120 150 4.5 7 15 23 12 18 25 38 711 22 33 9.5 14.5 6.5 10 8 1.00 1.50 0.7 3.5 -55 to +150 Outline Drawings Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C = < = < = < *1 L=5.53mH, Vcc=45V *2 Tch 150°C = < *4 VDS 450V < = |
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