BTA216B-600D datasheet(3/6 Pages) PHILIPS

No. de pieza	BTA216B-600D

Descripción Electrónicos	Three quadrant triacs guaranteed commutation

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Philips Semiconductors

Product specification

Three quadrant triacs

BTA216 series B

high commutation

Fig.1. Maximum on-state dissipation, P

tot, versus rms

on-state current, I

T(RMS), where α = conduction angle.

Fig.2. Maximum permissible non-repetitive peak

on-state current I

TSM, versus pulse width tp, for

sinusoidal currents, t

p ≤ 20ms.

Fig.3. Maximum permissible non-repetitive peak

on-state current I

TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.4. Maximum permissible rms current I

T(RMS) ,

versus mounting base temperature T

mb.

Fig.5. Maximum permissible repetitive rms on-state

current I

T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T

mb ≤ 99˚C.

Fig.6. Normalised gate trigger voltage

V

GT(Tj)/ VGT(25˚C), versus junction temperature Tj.

0

5

10

15

20

0

5

10

15

20

25

= 180

120

90

60

30

BT139

IT(RMS) / A

Ptot / W

Tmb(max) / C

125

119

113

107

101

95

1

-50

0

50

100

150

0

5

10

15

20

BT139

99 C

Tmb / C

IT(RMS) / A

10us

100us

1ms

10ms

100ms

10

100

1000

BTA216

T / s

ITSM / A

T

ITSM

time

I

Tj initial = 25 C max

T

dI /dt limit

T

0.01

0.1

1

10

0

10

20

30

40

50

BT139

surge duration / s

IT(RMS) / A

1

10

100

1000

0

50

100

150

BT139

Number of cycles at 50Hz

ITSM / A

T

ITSM

time

I

Tj initial = 25 C max

T

-50

0

50

100

150

0.4

0.6

0.8

1

1.2

1.4

1.6

BT136

Tj / C

VGT(Tj)

VGT(25 C)

October 1997

3

Rev 1.200

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