K6E1004C1B datasheet(3/9 Pages) SAMSUNG | 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out

3 page

K6E1004C1B-C/B-L

CMOS SRAM

PRELIMINARY

Rev. 3.0

- 3 -

July 1998

RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70

°C)

* VIL(Min) = -2.0V a.c(Pulse Width

≤ 10ns) for I ≤ 20mA .

** VIH(Max) = VCC + 2.0V a.c (Pulse Width

≤10ns) for I ≤ 20mA

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

VCC

4.5

5.0

5.5

Ground

VSS

Input High Voltage

VIH

2.2

VCC+0.5**

Input Low Voltage

VIL

-0.5*

0.8

DC AND OPERATING CHARACTERISTICS (TA=0 to 70

°C, Vcc=5.0V±10%, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Max

Unit

Input Leakage Current

ILI

VIN=VSS to VCC

-2

µA

Output Leakage Current

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

-2

µA

Operating Current

ICC

Min. Cycle, 100% Duty

CS=VIL, VIN=VIH or VIL, IOUT=0mA

15ns

120

20ns

118

Standby Current

ISB

Min. Cycle, CS=VIH

ISB1

f=0MHz, CS

≥VCC-0.2V,

VIN

≥VCC-0.2V or VIN≤0.2V

Normal

L-ver

Output Low Voltage Level

VOL

IOL=8mA

0.4

Output High Voltage Level

VOH

IOH=-4mA

2.4

CAPACITANCE*(TA=25

°C, f=1.0MHz)

* Capacitance is sampled and not 100% tested.

Item

Symbol

Test Conditions

MIN

Max

Unit

Input/Output Capacitance

CI/O

VI/O=0V

Input Capacitance

CIN

VIN=0V

ABSOLUTE MAXIMUM RATINGS*

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Rating

Unit

Voltage on Any Pin Relative to VSS

VIN, VOUT

-0.5 to 7.0

Voltage on VCC Supply Relative to VSS

VCC

-0.5 to 7.0

Power Dissipation

1.0

Storage Temperature

TSTG

-65 to 150

°C

Operating Temperature

0 to 70

°C

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