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BTA216-800E Datasheet(PDF) 2 Page - NXP Semiconductors |
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BTA216-800E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 4 page Philips Semiconductors Objective specification Three quadrant triacs BTA216 series D, E and F guaranteed commutation THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance full cycle - - 1.2 K/W junction to mounting base half cycle - - 1.7 K/W R th j-a Thermal resistance in free air - 60 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA216- ...D ...E ...F I GT Gate trigger current 2 V D = 12 V; IT = 0.1 A T2+ G+ - - 5 10 25 mA T2+ G- - - 5 10 25 mA T2- G- - - 5 10 25 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - - 15 20 25 mA T2+ G- - - 25 30 40 mA T2- G- - - 25 30 40 mA I H Holding current V D = 12 V; IGT = 0.1 A - - 15 25 30 mA V T On-state voltage I T = 20 A - 1.2 1.5 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V V D = 400 V; IT = 0.1 A; 0.25 0.4 - V T j = 125 ˚C I D Off-state leakage current V D = VDRM(max); - 0.1 0.5 mA T j = 125 ˚C DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BTA216- ...D ...E ...F dV D/dt Critical rate of rise of V DM = 67% VDRM(max);30 60 70 - - V/ µs off-state voltage T j = 110 ˚C; exponential waveform; gate open circuit dI com/dt Critical rate of change of V DM = 400 V; Tj = 110 ˚C; 1.8 3.5 4.5 - - A/ms commutating current I T(RMS) = 16 A; dV com/dt = 20v/µs; gate open circuit dI com/dt Critical rate of change of V DM = 400 V; Tj = 110 ˚C; 4.3 5.3 6.3 - - A/ms commutating current I T(RMS) = 16 A; dV com/dt = 0.1v/µs; gate open circuit t gt Gate controlled turn-on I TM = 20 A; VD = VDRM(max);- - - 2 - µs time I G = 0.1 A; dIG/dt = 5 A/µs 2 Device does not trigger in the T2-, G+ quadrant. October 1999 2 Rev 1.100 |
Número de pieza similar - BTA216-800E |
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Descripción similar - BTA216-800E |
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