MMST6428 datasheet(1/2 Pages) ROHM | NPN small signal transistor

1 page

MMST6428

Transistors

1/1

Each lead has same dimensions

Abbreviated symbol : R1K

MMST6428

(1)Emitter

(2)Base

(3)Collector

(2)

(1)

0.4

(3)

2.9

1.9

0.95

0.8

0.15

1.1

NPN small signal transistor

MMST6428

Features

Dimensions (Unit : mm)

1) Ideal for switching and AF amplifier applications.

Packaging specifications

Package

Code

Taping

Basic ordering unit (pieces)

MMST6428

T146

3000

Type

Absolute maximum ratings (Ta=25

°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Parameter

VCBO

VCEO

VEBO

Tstg

°C

0.2

125

−55 to 125

Symbol

Limits

Unit

Electrical characteristics (Ta=25

°C)

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cutoff current

Collector-emitter cutoff current

Emitter-base cutoff current

Collector-emitter saturation voltage

Base-emitter voltage

DC current transfer ratio

Collector output capacitance

Parameter

Symbol

BVCEO

BVCBO

ICBO

IEBO

VCE(sat)2

hFE

Cob

Min.

−

250

100

−

0.1

0.6

−

250

−−

700

3.0

VIC

= 1mA

= 100

µA

VCB

= 30V

VEB

= 5V

IC/IB

= 100mA/ 5mA

VCE

= 5V, IC= 0.01mA

250

−−

VCE

= 5V, IC= 0.1mA

250

−

650

VCE

= 5V, IC= 1mA

VCE

= 5V, IC= 10mA

VCE

= 5V, IC= 1mA, f=100MHz

VCB

= 10V, IE= 0A, f=1MHz

µA

ICEO

−−

0.1

VCE

= 30V

µA

VCE(sat)1

−

0.2

IC/IB

= 10mA/ 0.5mA

−

MHz

Typ.

Max.

Unit

Conditions

VBE(on)

0.56

−

0.66

VCE

= 5V, IC= 1mA

Transition frequency

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