MRF577T1 datasheet(2/12 Pages) MOTOROLA | The RF Small Signal Line NPN Silicon High-Frequency Transistor

2 page

MRF577T1

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mA, IB = 0 mA)

V(BR)CEO

—

Vdc

Collector–Base Breakdown Voltage

(IC = 0.1 mA, IE = 0)

V(BR)CBO

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 50 µA, IC = 0)

V(BR)EBO

2.5

—

Vdc

Collector Cutoff Current

(VCB = 8.0 Vdc, IE = 0)

ICBO

—

µA

ON CHARACTERISTICS

DC Current Gain

(VCE = 10 Vdc, IC = 30 mA)

hFE

—

300

—

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

0.85

—

Current–Gain Bandwidth Product

(VCE = 6.0 Vdc, IE = 40 mA, f = 1.0 GHz)

—

7.0

—

GHz

PERFORMANCE CHARACTERISTICS

Noise Figure — Minimum

500 MHz

(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1

1.0 GHz

NFmin

—

1.0

1.5

—

Associated Gain at Minimum Noise Figure

500 MHz

(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1

1.0 GHz

GNF

—

Maximum Unilateral Gain

(VCE = 6.0 Vdc, IC = 40 mA, f = 1000 MHz)

GUmax

—

Insertion Gain

(VCE = 6.0 Vdc, IC = 40 mA, f = 1000 MHz)

|S212|

—

Noise Resistance

(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1000 MHz)

—

6.0

—

Ohms

Figure 1. Functional Circuit Schematic

VBE

VCE

DUT

RF INPUT

RF OUTPUT

**SLUG TUNER

*BIAS

NETWORK

*BIAS

NETWORK

*HP11590B

**MICROLAB/FXR

**SF – 11N < 1 GHz

**SF – 31IN

≥ 1 GHz

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