Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
BU508AX Datasheet(PDF) 4 Page - NXP Semiconductors |
|
BU508AX Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX Fig.7. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB Fig.8. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.9. Typical collector-emitter saturation voltage. V CEsat = f (IB); parameter IC Fig.10. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T Fig.11. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Ths) BU508AD 0.1 1 10 0 0.2 0.4 0.6 0.8 1 IC / A VCESAT / V 0.1 0.3 0.5 0.7 0.9 1.0E-07 1.0E-05 1E-03 1.0E-01 1.0E+1 0.001 0.01 0.1 1 10 0 0.2 0.1 0.05 0.02 0.5 bu508ax t / s Zth K/W D = tp tp T T P t D 0 123 4 0.6 0.8 1 1.2 1.4 IC = 6A IC = 4.5A IC = 3A IB / A VBESAT / V BU508AD 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound BU508AD 0.1 1 10 0.1 1 10 IC = 4.5A IC = 6A IC = 3A VCESAT/V IB/A July 1998 4 Rev 1.200 |
Número de pieza similar - BU508AX |
|
Descripción similar - BU508AX |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |