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BU508AX Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza BU508AX
Descripción Electrónicos  Silicon Diffused Power Transistor
Download  7 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU508AX Datasheet(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU508AX
Fig.7. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
Fig.8. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.9. Typical collector-emitter saturation voltage.
V
CEsat = f (IB); parameter IC
Fig.10. Transient thermal impedance.
Z
th j-hs = f(t); parameter D = tp/T
Fig.11. Normalised power dissipation.
PD% = 100
⋅P
D/PD 25˚C = f (Ths)
BU508AD
0.1
1
10
0
0.2
0.4
0.6
0.8
1
IC / A
VCESAT / V
0.1
0.3
0.5
0.7
0.9
1.0E-07
1.0E-05
1E-03
1.0E-01
1.0E+1
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
bu508ax
t / s
Zth K/W
D =
tp
tp
T
T
P
t
D
0
123
4
0.6
0.8
1
1.2
1.4
IC = 6A
IC = 4.5A
IC = 3A
IB / A
VBESAT / V
BU508AD
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BU508AD
0.1
1
10
0.1
1
10
IC = 4.5A
IC = 6A
IC = 3A
VCESAT/V
IB/A
July 1998
4
Rev 1.200


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