IRGP4068DPBF datasheet(1/10 Pages) IRF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

1 page

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE

FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

IRGP4068DPbF

IRGP4068D-EPbF

PD - 97250

www.irf.com

08/16/06

n-channel

VCES = 600V

IC = 48A, TC = 100°C

tSC ≥ 5µs, TJ(max) = 175°C

VCE(on) typ. = 1.65V

Features

• Low VCE (ON) Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

• 5 µS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (ILM)

• Positive VCE (ON) Temperature co-efficient

• Ultra-low VF Hyperfast Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• Device optimized for induction heating and soft switching

applications

• High Efficiency due to Low VCE(on), Low Switching Losses

and Ultra-low VF

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

Gate

Collector

Emitter

TO-247AC

IRGP4068DPbF

TO-247AD

IRGP4068D-EPbF

G C

Absolute Maximum Ratings

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

IC @ TC = 25°C

Continuous Collector Current

IC @ TC = 100°C

Continuous Collector Current

ICM

Pulse Collector Current

192

ILM

Clamped Inductive Load Current

192

IF @ TC = 160°C

Diode Continous Forward Current

8.0

IFSM

Diode Non Repetitive Peak Surge Current @ TJ = 25°C d

175

IFM

Diode Peak Repetitive Forward Current

VGE

Continuous Gate-to-Emitter Voltage

±20

Transient Gate-to-Emitter Voltage

±30

PD @ TC = 25°C

Maximum Power Dissipation

330

PD @ TC = 100°C

Maximum Power Dissipation

170

Operating Junction and

-55 to +175

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJC (IGBT)

Thermal Resistance Junction-to-Case-(each IGBT)

–––

0.45

°C/W

RθJC (Diode)

Thermal Resistance Junction-to-Case-(each Diode)

–––

2.0

RθCS

Thermal Resistance, Case-to-Sink (flat, greased surface)

–––

0.24

–––

RθJA

Thermal Resistance, Junction-to-Ambient (typical socket mount)

–––

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