BUK104-50LP datasheet(3/14 Pages) PHILIPS

No. de pieza	BUK104-50LP

Descripción Electrónicos	PowerMOS transistor Logic level TOPFET

Download	14 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

Logo

3 / 14 page

Philips Semiconductors

Product specification

PowerMOS transistor

BUK104-50L/S

Logic level TOPFET

BUK104-50LP/SP

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

I

DRRM

Repetitive peak clamping drain current R

IS ≥ 100 Ω

1

-15

A

E

DSM

Non-repetitive inductive turn-off

I

DM = 15 A; RIS ≥ 100 Ω

-

200

mJ

energy

2

E

DRM

Repetitive inductive turn-off energy

R

IS ≥ 100 Ω; Tmb ≤ 95 ˚C;

-

20

mJ

I

DM = 4 A; VDD ≤ 20 V;

f = 250 Hz

I

DIRM

Repetitive peak drain to input current

3

R

IS = 0 Ω; tp ≤ 1 ms

-

50

mA

REVERSE DIODE LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

I

S

Continuous forward current

T

mb = 25 ˚C;

-

15

A

V

IS = VPS = VFS = 0 V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Thermal resistance

R

th j-mb

Junction to mounting base

-

2.5

3.1

K/W

R

th j-a

Junction to ambient

in free air

-

60

-

K/W

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(CL)DSR

Drain-source clamping voltage

R

IS = 100 Ω; ID = 10 mA

50

-

65

V

(CL)DSR

Drain-source clamping voltage

R

IS = 100 Ω; IDM = 1 A; tp ≤ 300 µs;

50

-

70

V

δ ≤ 0.01

I

DSS

Zero input voltage drain current V

DS = 12 V; VIS = 0 V

-

0.5

10

µA

I

DSR

Drain source leakage current

V

DS = 50 V; RIS = 100 Ω;-

1

20

µA

I

DSR

Drain source leakage current

V

DS = 40 V; RIS = 100 Ω;

T

j =

125 ˚C

-

10

100

µA

R

DS(ON)

Drain-source on-state

I

DM = 7.5 A;

V

IS = 7 V

-

75

100

m

Ω

resistance

t

p ≤ 300 µs; δ ≤ 0.01

V

IS = 5 V

-

95

125

m

Ω

1 The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to

become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS.

2 While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at

energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS.

3 Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source

voltage becoming positive.

January 1993

3

Rev 1.200

Número de pieza similar - BUK104-50LP

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NXP Semiconductors	BUK104-50LP	147Kb / 14P	PowerMOS transistor Logic level TOPFET January 1993 Rev 1.200

More results

Descripción similar - BUK104-50LP

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NXP Semiconductors	BUK102-50DL	86Kb / 10P	PowerMOS transistor Logic level TOPFET April 1993 Rev 1.100
	BUK109-50GL	109Kb / 11P	PowerMOS transistor Logic level TOPFET June 1996 Rev 1.000
	BUK101-50DL	89Kb / 10P	PowerMOS transistor Logic level TOPFET April 1993 Rev 1.100
	BUK104-50L	147Kb / 14P	PowerMOS transistor Logic level TOPFET January 1993 Rev 1.200
	BUK107-50DS	62Kb / 9P	PowerMOS transistor Logic level TOPFET March 1997 Rev 1.200
	BUK108-50GL	127Kb / 11P	PowerMOS transistor Logic level TOPFET June 1996 Rev 1.000
Guangdong Kexin Industr...	KUK108-50DL	64Kb / 3P	PowerMOS transistor Logic level TOPFET
NXP Semiconductors	BUK100-50DL	85Kb / 10P	PowerMOS transistor Logic level TOPFET November 1996 Rev 1.200
	BUK107-50DL	77Kb / 9P	PowerMOS transistor Logic level TOPFET March 1997 Rev 1.200
	BUK112-50GL	91Kb / 16P	PowerMOS transistor Logic level TOPFET September 1996 Rev 1.000
	BUK113-50DL	32Kb / 6P	PowerMOS transistor Logic level TOPFET January 1996 Rev 1.000

More results

BUK104-50LP Datasheet(PDF) 3 Page - NXP Semiconductors

BUK104-50LP Datasheet(HTML) 3 Page - NXP Semiconductors

Número de pieza similar - BUK104-50LP

Descripción similar - BUK104-50LP

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Descarga

Enlace URL