BD138 datasheet(2/4 Pages) STMICROELECTRONICS

No. de pieza	BD138

Descripción Electrónicos	PNP SILICON TRANSISTORS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

10

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -30 V

TC = 125

oC

-0.1

-10

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-10

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = -30 mA

for BD136

for BD138

for BD140

-45

-60

-80

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -0.5 A

IB = -0.05 A

-0.5

V

VBE

∗

Base-Emitter Voltage

IC = -0.5 A

VCE = -2 V

-1

V

hFE

∗

DC Current Gain

IC = -5 mA

VCE = -2 V

IC = -150 mA

VCE = -2 V

IC = -0.5 A

VCE = -2 V

25

40

25

250

hFE

hFE Groups

IC = -150 mA

VCE = -2 V

for BD136/BD140 group-10

for BD136/BD140 group-16

63

100

160

250

* Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %

Safe Operating Areas

BD136 / BD138 / BD140

2/4

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