2N4401_07 datasheet(4/7 Pages) ONSEMI | General Purpose Transistors NPN Silicon

Nombre de pieza

Descripción

2N4401_07

General Purpose Transistors NPN Silicon ( 7 Page)

ONSEMI

4 page

2N4401

http://onsemi.com

Figure 7. Storage Time

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

IC, COLLECTOR CURRENT (mA)

100

5.0

7.0

100

200

300

500

100

200

300

100

200

300

500

ts′ = ts − 1/8 tf

IB1 = IB2

IC/IB = 10 to 20

VCC = 30 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

6.0

8.0

4.0

2.0

0.1

2.0 5.0

1.0

0.5

0.2

0.01 0.02 0.05

100

Figure 9. Frequency Effects

f, FREQUENCY (kHz)

SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz

IC = 1.0 mA, RS = 150 W

IC = 500 mA, RS = 200 W

IC = 100 mA, RS = 2.0 kW

IC = 50 mA, RS = 4.0 kW

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

100k

100 200

500 1.0k 2.0k

5.0k 10k 20k

50k

6.0

8.0

4.0

2.0

Figure 10. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

f = 1.0 kHz

IC = 50 mA

IC = 100 mA

IC = 500 mA

IC = 1.0 mA

1 2 3 4 5 6 7

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